Oxidized Nano-Porous-Silicon Buffer Layers for Suppressing the Visible Photoresponsivity of ZnO Ultraviolet Photodetectors on Si Substrates

<table>Selected <svg height="8.80632pt" id="M14" version="1.1" viewbox="0 -8.80632 8.87407 8.80632" width="8.87407pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.0135,0,0,-0.0135,0,0)"><path d="M655 0V28C585 35 563 50 517 120C469 193 414 280 360 366C427 469 460 516 481 545C526 604 545 614 619 622V650H391V622C457 614 462 604 438 560C411 511 381 463 339 398C295 466 258 523 225 580C210 606 211 615 272 622V650H26V622C98 614 111 603 154 538C189 482 235 408 288 324C200 188 149 116 124 85C95 47 64 34 7 28V0H236V28C169 36 164 46 188 89C220 148 261 217 310 291C372 193 417 118 442 77C461 44 454 35 392 28V0H655Z" id="g190-89"></path><glyph.data ascent="989" descent="-360" horiz-adv-x="654" vert-adv-y="654"></glyph.data></g></svg>-ray diffraction patterns of ZnO films deposited on different substrates.</table>

Journal of Nanomaterials

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Figure 4

Figure 4: Oxidized Nano-Porous-Silicon Buffer Layers for Suppressing the Visible Photoresponsivity of ZnO Ultraviolet Photodetectors on Si Substrates 

Figure 4 | Oxidized Nano-Porous-Silicon Buffer Layers for Suppressing the Visible Photoresponsivity of ZnO Ultraviolet Photodetectors on Si Substrates 