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Journal of Nanomaterials
Volume 2014, Article ID 818160, 6 pages
Research Article

Performance Study of CdS/Co-Doped-CdSe Quantum Dot Sensitized Solar Cells

Beijing Key Laboratory for Sensor, Ministry of Education Key Laboratory for Modern Measurement and Control Technology, Research Center for Sensor Technology, and School of Applied Sciences, Beijing Information Science and Technology University, Jianxiangqiao Campus, Beijing 100101, China

Received 19 January 2014; Revised 2 April 2014; Accepted 2 April 2014; Published 16 April 2014

Academic Editor: William W. Yu

Copyright © 2014 Xiaoping Zou et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


In order to optimize the charge transfer path in quantum dot sensitized solar cells (QDSCs), we employed successive ionic layer adsorption and reaction method to dope CdSe with Co for fabricating CdS/Co-doped-CdSe QDSCs constructed with CdS/Co-doped-CdSe deposited on mesoscopic TiO2 film as photoanode, Pt counter electrode, and sulfide/polysulfide electrolyte. After Co doping, the bandgap of CdSe quantum dot decreases, and the conduction band and valence band all improve, forming a cascade energy level which is more conducive to charge transport inside the solar cell and reducing the recombination of electron-hole thus improving the photocurrent and ultimately improving the power conversion efficiency. This work has not been found in the literature.