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Journal of Nanomaterials
Volume 2014, Article ID 820763, 8 pages
http://dx.doi.org/10.1155/2014/820763
Research Article

Performance Evaluation of 14 nm FinFET-Based 6T SRAM Cell Functionality for DC and Transient Circuit Analysis

Faculty of Electrical Engineering, Universiti Teknologi Malaysia (UTM), 81310 Skudai, Johor, Malaysia

Received 15 February 2014; Revised 28 June 2014; Accepted 6 July 2014; Published 23 July 2014

Academic Editor: Shiren Wang

Copyright © 2014 Wei Lim et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Wei Lim, Huei Chaeng Chin, Cheng Siong Lim, and Michael Loong Peng Tan, “Performance Evaluation of 14 nm FinFET-Based 6T SRAM Cell Functionality for DC and Transient Circuit Analysis,” Journal of Nanomaterials, vol. 2014, Article ID 820763, 8 pages, 2014. https://doi.org/10.1155/2014/820763.