Terahertz Performance of a GaN-Based Planar Nanochannel Device
Figure 1
Schematic top view (a) and side view (b) of the simulated nanochannel device (not to scale). The grey areas and the white area in the top view represent insulating trenches and the 2DEG, respectively. A GaN/AlGaN interface is only 30 nm below the device surface, at which a sheet of 2DEG forms. In the simulations, all the insulating trenches are assumed to have vertical sidewalls and pass through the whole GaN/AlGaN heterostructure.
