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Journal of Nanomaterials
Volume 2014 (2014), Article ID 857614, 7 pages
Research Article

Effects of Hydrogen on the Optical and Electrical Characteristics of the Sputter-Deposited Al2O3-Doped ZnO Thin Films

1Department of Electrical Engineering and Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 402, Taiwan
2Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan
3Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan

Received 22 October 2013; Accepted 13 January 2014; Published 9 March 2014

Academic Editor: Hong Seok Lee

Copyright © 2014 Fang-Hsing Wang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


In this study, AZO thin films were deposited on glass by using a 98 mol% ZnO + 1 mol% Al2O3 (AZO, Zn : Al = 98 : 2) ceramic target and a r.f. magnetron sputtering system. At first, the effects of different H2 flow rates (H2/(H2 + Ar) = 0%~9.09%, abbreviated as H2-deposited AZO thin films, deposition temperature was 200°C) added during the deposition process on the physical and electrical properties of AZO thin films were investigated. The optical transmittance at 400 nm~700 nm is more than 80% for all AZO thin films regardless of H2 flow rate and the transparency ratio decreased as the H2 flow rate increased. The Burstein-Moss shift effect was used to prove that the defects of AZO thin films decreased with increasing H2 flow rate. Also, the 2% H2-deposited AZO thin films were also treated by the H2 plasma at room temperature for 60 min (plasma-treated AZO thin films). The value variations in the optical band gap ( ) values of the H2-deposited and plasma-treated AZO thin films were evaluated from the plots of , and the values increased with increasing H2 flow rate. The values also increased as the H2-plasma process was used to treat on the H2-deposited Al2O3-doped ZnO (AZO) thin films.