Texture-Etched SnO₂ Glasses Applied to Silicon Thin-Film Solar Cells

Table 1

Deposition parameters and properties of p-, i-, n-type Si and buffer layers by HWCVD.

Film	Unit	p-layer	Buffer	i-layer	n-layer
Filament temperature	°C	1700	1700	1700	1700
Substrate temperature	°C	300	300	300	300
Pressure	mTorr	100	100	100	100
Gas flow rate (Φ)	sccm	ΦSiH4=2; ΦB2H6=20	ΦSiH4=1; ΦCH4=1; ΦB2H6=3; ΦH2=20	ΦSiH4=2	ΦSiH4=2; ΦPH3=18
Energy gap	eV	1.97	2.18	1.68	1.78
Crystalline fraction	%	67	59	Amorphous	57
Deposition rate	nm/sec	0.201	0.208	0.262	0.213
Hall concentration	cm^−3	1×10^20	5×10^19	—	×10^19