Horizontal Assembly of Single Nanowire Diode Fabricated by p-n Junction GaN NW Grown by MOCVD
Figure 1
Schematic illustration of horizontally assembled single p-n junction nanowire diode fabricated on SiO2/Si substrates. (i) Au + Ga droplets formation on Si(111) substrate, (ii) n-GaN seed formation at 710°C, (iii) n-GaN/Si nanowire formation at 920°C (1 hour), (iv) formation of p-GaN/Mg nanowire at 850°C (20 min), and (v) horizontal assembly of p-n junction nanowire using e-beam lithography and lift-off techniques.
