Horizontal Assembly of Single Nanowire Diode Fabricated by p-n Junction GaN NW Grown by MOCVD

Figure 5

FE-SEM image of (a) p-n junction GaN nanowire, (b) and (c) the CL spectrum and mapping (436 nm) taken at p-GaN/Mg region, and (d) the CL spectrum taken at n-GaN/Si region.