Horizontal Assembly of Single Nanowire Diode Fabricated by p-n Junction GaN NW Grown by MOCVD
Figure 6
FE-SEM image of (a) horizontally assembled p-n junction diode by single GaN nanowire, (b) the I/V measurements of GaN nanowire device in the dark and under UV illumination (wavelength λ = 365 and 254 nm).
