Theoretical Study of the Effects of Carrier Transport, Capture, and Escape Processes on Solar Cells with Embedded Nanostructures
Figure 8
The output photocurrent density contributed from the nanostructures (dot line), the bulk material (dash line), and their sum (solid line) as a function of the band-gap energy of the nanostructures at different carrier lifetimes of the nanostructures . (a) The ratio of the carrier transport time and the carrier capture time is assumed to be 0.1 to represent the ideal cases of very fast carrier transport processes in the bulk i-region. (b) The ratio of the carrier transport time and the carrier capture time is assumed to be 1. (c) The ratio of the carrier transport time and the carrier capture time is assumed to be 10 to represent the cases of very slow carrier transport processes in the bulk i-region.
