Performance Improvement of GaN-Based Flip-Chip White Light-Emitting Diodes with Diffused Nanorod Reflector and with ZnO Nanorod Antireflection Layer

<table>The electroluminescence spectra of the resulting FCWLEDs and FCLEDs with and without 250 nm long ZnO nanorod antireflection layer at an injection current of 20 mA.</table>

Journal of Nanomaterials

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Figure 4

Figure 4: Performance Improvement of GaN-Based Flip-Chip White Light-Emitting Diodes with Diffused Nanorod Reflector and with ZnO Nanorod Antireflection Layer 

Figure 4 | Performance Improvement of GaN-Based Flip-Chip White Light-Emitting Diodes with Diffused Nanorod Reflector and with ZnO Nanorod Antireflection Layer 