Synthesis, Characteristics, and Material Properties Dataset of Bi:DyIG-Oxide Garnet-Type Nanocomposites
Table 1
RF magnetron cosputtering process parameters and conditions used to fabricate various magnetooptic garnet-oxide thin films of type (Bi2Dy1Fe4Ga1O12:Bi2O3).
Process parameters used for thin film garnets preparation
Values & comments
Sputtering target compositions
Bi2Dy1O12 (where and 0.7) and Bi2O3 (the materials’ purity was 99.99% for all targets)
Dimensions of targets
3′′ dia. × 0.125′′ thick, bonded to 0.125′′ Cu backing plates
Sputter gas and pressure
Argon (Ar.), (total) = 1-2 mTorr
Base pressure inside vacuum chamber
(base) < 1–4 Torr
RF power densities for garnets
3.3–7 W/cm2 (150–320 W)
RF power densities for Bi2O3
0.44–3.96 W/cm2 (20–180 W)
Substrate temperature
250–400°C
Partial deposition rates for garnets
3.5–9.0 nm/min
Partial deposition rates for Bi2O3
1.2–5.0 nm/min
Annealing temperature
490–680°C
Annealing process duration
(<1)–180 minutes, with the ramp-up/ramp-down rates of 3–5°C/min when using a conventional box-furnace-type temperature-controlled air-atmosphere oven-annealing system (Sentro Tech, Inc., USA)
Properties characterized
Optical, magnetic, and MO properties of all nanocomposite films
Characterization techniques used
Spectrophotometry, custom thin film optimization software, Thorlabs PAX visible-range polarimetry system in conjunction with a custom-made calibrated electromagnet, and transmission-mode polarization microscopy (Leitz Orthoplan).
