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Journal of Nanomaterials
Volume 2015, Article ID 142096, 6 pages
Research Article

Improved Light Output Power of Chemically Transferred InGaN/GaN Light-Emitting Diodes for Flexible Optoelectronic Applications

1Department of Electrical Engineering and Computer Science, Nagoya University, Nagoya, Aichi 464-8603, Japan
2Department of Physics and Photon Science, Gwangju Institute of Science and Technology (GIST), Gwangju 500-712, Republic of Korea
3HPC Advanced Development Team, LG Innotek, Paju, Gyeonggi-do 413-901, Republic of Korea
4Wafer Characteristics Research Team, LG Siltron, Gumi, Gyeongsangbuk-do 730-724, Republic of Korea

Received 14 August 2015; Accepted 27 September 2015

Academic Editor: Kamal Alameh

Copyright © 2015 Ho-Jun Lee et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Recent needs of semiconductor lighting sources have pursued diverse functionalities such as flexibility and transparency under high quantum efficiency. Inorganic/organic hybrid light-emitting diodes (LEDs) are one way to meet these requirements. Here, we report on flexible III-nitride-based LEDs and the improvement of their electrical and optical properties. To realize high light emission power and stable current operation, high-quality epitaxy and elaborate chip processing were performed. The fabricated flexible LEDs showed over threefold optical output power compared to normal LEDs on Si and had comparable forward voltage and series resistances.