Research Article
Improved Light Output Power of Chemically Transferred InGaN/GaN Light-Emitting Diodes for Flexible Optoelectronic Applications
Figure 1
(a) Schematic of grown epitaxial LED structures, cross-sectional TEM images for (b) n-GaN template regions and (c) InGaN/GaN MQW regions, and (d) AFM images of LED epilayer (2 × 2 μm2).
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