Improved Light Output Power of Chemically Transferred InGaN/GaN Light-Emitting Diodes for Flexible Optoelectronic Applications

Figure 2

Schematic of flexible LED procedures. (a) Epistructures, (b) chip fabrication on p-GaN side, (c) wafer bonding to supporter and polymer covering, (d) mother Si substrate removal and chip fabrication on n-GaN side, (e) PDMS deposition and curing, (f) supporting substrate removal, (g) LED chip transfer to metal-patterned PET films, and (h) PDMS removal by UV exposure and flexible LEDs on PET films.