Improved Light Output Power of Chemically Transferred InGaN/GaN Light-Emitting Diodes for Flexible Optoelectronic Applications

Figure 3

Camera image of (a) bonded Si supporter and (b) fabricated LED chips on supporter after mother substrate removal. (c) Optical microscope image of single chip on n-electrode side and (d) corresponding image under current injection of 100 mA. The insets of (a) and (c) are enlarged camera image at edge of bonded wafers and SEM image of N-face n-GaN region after KOH etching, respectively.