Substrate Temperature Effect on the Microstructure and Properties of (Si, Al)/a-C:H Films Prepared through Magnetron Sputtering Deposition

Table 1

Deposition parameters of the films.

Parameters	Value
Working pressure (Pa)	1.2
Radio frequency power (W)	700
Negative substrate bias (V)	−200
Substrate current (mA)	100
Bias frequency (KHz)	40
Deposition duration (min)	90