Graphene and Other 2D Material Components Dynamic Characterization and Nanofabrication at Atomic Scale

Figure 1

(a) Conventional TEM image of a MOSFET near the bottom in the silicon substrate, the source and drain and vertically in the center, the high-κ-containing gate stack. (b) Energy-filtered TEM image, with some of the chemical elements color-coded. (c) STEM ADF image of the same device, with the 3 nm thick high-κ layer showing bright. (d) Energy-filtered map similar to (b), but now showing the oxygen distribution in more detail. Spacers and gate oxide become clear, as well as a ~2 nm thick oxygen-containing layer between the gate metal and polycrystalline silicon.