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Journal of Nanomaterials
Volume 2015, Article ID 263734, 6 pages
http://dx.doi.org/10.1155/2015/263734
Research Article

Efficiency Enhancement of Gallium Arsenide Photovoltaics Using Solution-Processed Zinc Oxide Nanoparticle Light Scattering Layers

1Department of Electrical Engineering, Stanford University, Stanford, CA 94305, USA
2Department of Physics, Stanford University, Stanford, CA 94305, USA
3Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA
4Department of Applied Physics, Stanford University, Stanford, CA 94305, USA

Received 10 September 2015; Revised 22 November 2015; Accepted 26 November 2015

Academic Editor: Xiaosheng Fang

Copyright © 2015 Yangsen Kang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

We demonstrate a high-throughput, solution-based process for subwavelength surface texturing of a III-V compound solar cell. A zinc oxide (ZnO) nanoparticle ink is spray-coated directly on top of a gallium arsenide (GaAs) solar cell. The nanostructured ZnO films have demonstrated antireflection and light scattering properties over the visible/near-infrared (NIR) spectrum. The results show a broadband spectral enhancement of the solar cell external quantum efficiency (EQE), a 16% enhancement of short circuit current, and a 10% increase in photovoltaic efficiency.