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Journal of Nanomaterials
Volume 2015, Article ID 284835, 8 pages
http://dx.doi.org/10.1155/2015/284835
Research Article

The Achievement of a Zinc Oxide-Based Homojunction Diode Using Radio Frequency Magnetron Cosputtering System

1Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin 63201, Taiwan
2ITRI South, Industrial Technology Research Institute, Tainan 73445, Taiwan
3Institute of Microelectronics, National Cheng Kung University, Tainan 70101, Taiwan

Received 18 September 2014; Accepted 16 March 2015

Academic Editor: Giuseppe Compagnini

Copyright © 2015 Hung-Jen Chiu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Hung-Jen Chiu, Tai-Hong Chen, Li-Wen Lai, Ching-Ting Lee, Jhen-Dong Hong, and Day-Shan Liu, “The Achievement of a Zinc Oxide-Based Homojunction Diode Using Radio Frequency Magnetron Cosputtering System,” Journal of Nanomaterials, vol. 2015, Article ID 284835, 8 pages, 2015. https://doi.org/10.1155/2015/284835.