The Achievement of a Zinc Oxide-Based Homojunction Diode Using Radio Frequency Magnetron Cosputtering System

<table class="figure-group"><tr class="fig-image" id="a"><td><object data="https://static.hindawi.com/articles/jnm/volume-2015/284835/figures/284835.fig.003a.svgz" name="284835.fig.003a" type="image/svg+xml"></object></td></tr><tr class="fig-caption"><td><b>(a) </b>As-deposited (Al + N) codoped ZnO</td></tr><tr class="fig-image" id="b"><td><object data="https://static.hindawi.com/articles/jnm/volume-2015/284835/figures/284835.fig.003b.svgz" name="284835.fig.003b" type="image/svg+xml"></object></td></tr><tr class="fig-caption"><td><b>(b) </b>Annealed (Al + N) codoped ZnO</td></tr></table>

<div>Room temperature PL spectra of the (a) as-deposited and (b) annealed (Al + N) codoped ZnO films.</div>

Journal of Nanomaterials

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Figure 3

Figure 3: The Achievement of a Zinc Oxide-Based Homojunction Diode Using Radio Frequency Magnetron Cosputtering System 