Journal of Nanomaterials / 2015 / Article / Fig 7

Research Article

The Achievement of a Zinc Oxide-Based Homojunction Diode Using Radio Frequency Magnetron Cosputtering System

Figure 7

(a) I-V characteristic and (b) specific contact resistance of the Ni/Au metallic electrode contacts to the p-ZnO layer as a function of the annealing temperatures for 1 min under nitrogen ambient.

Article of the Year Award: Outstanding research contributions of 2020, as selected by our Chief Editors. Read the winning articles.