Journal of Nanomaterials / 2015 / Article / Fig 7

Research Article

The Achievement of a Zinc Oxide-Based Homojunction Diode Using Radio Frequency Magnetron Cosputtering System

Figure 7

(a) I-V characteristic and (b) specific contact resistance of the Ni/Au metallic electrode contacts to the p-ZnO layer as a function of the annealing temperatures for 1 min under nitrogen ambient.
(a)
(b)

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