Research Article
The Achievement of a Zinc Oxide-Based Homojunction Diode Using Radio Frequency Magnetron Cosputtering System
Figure 7
(a) I-V characteristic and (b) specific contact resistance of the Ni/Au metallic electrode contacts to the p-ZnO layer as a function of the annealing temperatures for 1 min under nitrogen ambient.
| (a) |
| (b) |