The Achievement of a Zinc Oxide-Based Homojunction Diode Using Radio Frequency Magnetron Cosputtering System

Table 1

Electrical properties of the as-deposited, annealed ZnO, and (Al + N) codoped ZnO films, and the ITO-ZnO cosputtered film.

Sample	Concentration (/cm^3)	Mobility (cm^2/VS)	Resistivity ( cm)	Type
As-deposited ZnO	N/A	N/A	>10^5	N/A
Annealed ZnO	3.1 × 10^16	19.1	10.6
As-deposited (Al + N) codoped ZnO	2.4 × 10^19	1.2	0.2
Annealed (Al + N) codoped ZnO	1.9 × 10^18	3.4	0.9
ITO-ZnO	8.2 × 10^20	13.5	5.6 × 10^−4