Research Article
The Achievement of a Zinc Oxide-Based Homojunction Diode Using Radio Frequency Magnetron Cosputtering System
Table 1
Electrical properties of the as-deposited, annealed ZnO, and (Al + N) codoped ZnO films, and the ITO-ZnO cosputtered film.
| Sample | Concentration (/cm3) | Mobility (cm2/VS) | Resistivity ( cm) | Type |
| As-deposited ZnO | N/A | N/A | >105 | N/A | Annealed ZnO | 3.1 × 1016 | 19.1 | 10.6 | | As-deposited (Al + N) codoped ZnO | 2.4 × 1019 | 1.2 | 0.2 | | Annealed (Al + N) codoped ZnO | 1.9 × 1018 | 3.4 | 0.9 | | ITO-ZnO | 8.2 × 1020 | 13.5 | 5.6 × 10−4 | |
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