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Journal of Nanomaterials
Volume 2015, Article ID 298614, 10 pages
Research Article

ZnCuInS/ZnSe/ZnS Quantum Dot-Based Downconversion Light-Emitting Diodes and Their Thermal Effect

1State Key Laboratory on Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
2State Key Laboratory of Superhard Materials and College of Physics, Jilin University, Changchun 130012, China
3Department of Chemistry and Physics, Louisiana State University, Shreveport, LA 71115, USA
4Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA

Received 25 June 2015; Revised 6 August 2015; Accepted 13 August 2015

Academic Editor: Peter Reiss

Copyright © 2015 Wenyan Liu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The quantum dot-based light-emitting diodes (QD-LEDs) were fabricated using blue GaN chips and red-, yellow-, and green-emitting ZnCuInS/ZnSe/ZnS QDs. The power efficiencies were measured as 14.0 lm/W for red, 47.1 lm/W for yellow, and 62.4 lm/W for green LEDs at 2.6 V. The temperature effect of ZnCuInS/ZnSe/ZnS QDs on these LEDs was investigated using CIE chromaticity coordinates, spectral wavelength, full width at half maximum (FWHM), and power efficiency (PE). The thermal quenching induced by the increased surface temperature of the device was confirmed to be one of the important factors to decrease power efficiencies while the CIE chromaticity coordinates changed little due to the low emission temperature coefficients of 0.022, 0.050, and 0.068 nm/°C for red-, yellow-, and green-emitting ZnCuInS/ZnSe/ZnS QDs. These indicate that ZnCuInS/ZnSe/ZnS QDs are more suitable for downconversion LEDs compared to CdSe QDs.