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Journal of Nanomaterials
Volume 2015, Article ID 326294, 9 pages
Research Article

Tuning Electronic Structures of BN and C Double-Wall Hetero-Nanotubes

School of Materials Engineering, Yancheng Institute of Technology, Yancheng, Jiangsu 224051, China

Received 8 April 2015; Revised 15 June 2015; Accepted 2 July 2015

Academic Editor: Dan Xia

Copyright © 2015 Xueran Liu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


First principle calculations based on density functional theory with the generalized gradient approximation were carried out to investigate the energetic and electronic properties of carbon and boron nitride double-wall hetero-nanotubes (C/BN-DWHNTs) with different chirality and size, including an armchair (, ) carbon nanotube (CNT) enclosed in (, ) boron nitride nanotube (BNNT) and a zigzag (, 0) CNT enclosed in (, 0) BNNT. The electronic structure of these DWHNTs under a transverse electric field was also investigated. The ability to tune the band gap with changing the intertube distance () and imposing an external electric field () of zigzag DWHNTs provides the possibility for future electronic and electrooptic nanodevice applications.