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Journal of Nanomaterials
Volume 2015, Article ID 327596, 5 pages
Research Article

Grown Low-Temperature Microcrystalline Silicon Thin Film by VHF PECVD for Thin Films Solar Cell

1School of Physical Science & Technology, Lanzhou University, Lanzhou 730000, China
2Key Laboratory of Semiconductor Material Sciences, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received 6 December 2014; Accepted 13 February 2015

Academic Editor: William W. Yu

Copyright © 2015 Shanglong Peng et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Hydrogenated microcrystalline silicon thin films can be used to fabricate stable thin film solar cell, which were deposited by very high frequency plasma-enhanced chemical vapor deposition at low temperatures (~200°C). It has been found that the obtained film presented excellent structural and electrical properties, such as high growth rate and good crystallinity. With the decreasing of silane concentration, the optical gap and the dark conductivity increased, whereas the activation energy decreased. A reasonable explanation was presented to elucidate these phenomena. In addition, we fabricated p-i-n structure solar cells using the optimum microcrystalline silicon thin films, and preliminary efficiency of 4.6% was obtained for 1 μm thick microcrystalline silicon thin film solar cells with open-circuits voltage of 0.773 V and short-circuits current density of 12.28 mA/cm2. Future scope for performance improvement lies mainly in further increasing the short-circuit current.