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Journal of Nanomaterials
Volume 2015, Article ID 340616, 7 pages
http://dx.doi.org/10.1155/2015/340616
Research Article

Nanoscale Ferroelectric Switchable Polarization and Leakage Current Behavior in (Ba0.50Sr0.50)(Ti0.80Sn0.20)O3 Thin Films Prepared Using Chemical Solution Deposition

1Department of Physics and Engineering Physics, Tulane University, New Orleans, LA 70118, USA
2Department of Physics, University of Puerto Rico, San Juan, PR 00936, USA
3Department of Mechanical Engineering, University of Texas, El Paso, TX 79968, USA

Received 19 March 2015; Accepted 20 April 2015

Academic Editor: Hassan Karimi-Maleh

Copyright © 2015 Venkata Sreenivas Puli et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Nanoscale switchable ferroelectric ()()-BSTS polycrystalline thin films with a perovskite structure were prepared on Pt/TiOx/SiO2/Si substrate by chemical solution deposition. X-ray diffraction (XRD) spectra indicate that a cubic perovskite crystalline structure and Raman spectra revealed that a tetragonal perovskite crystalline structure is present in the thin films. Sr2+ and Sn4+ cosubstituted film exhibited the lowest leakage current density. Piezoresponse Force Microscopy (PFM) technique has been employed to acquire out-of-plane (OPP) piezoresponse images and local piezoelectric hysteresis loop in polycrystalline BSTS films. PFM phase and amplitude images reveal nanoscale ferroelectric switching behavior at room temperature. Square patterns with dark and bright contrasts were written by local poling and reversible nature of the piezoresponse behavior was established. Local piezoelectric butterfly amplitude and phase hysteresis loops display ferroelectric nature at nanoscale level. The significance of this paper is to present ferroelectric/piezoelectric nature in present BSTS films at nanoscale level and corroborating ferroelectric behavior by utilizing Raman spectroscopy. Thus, further optimizing physical and electrical properties, BSTS films might be useful for practical applications which include nonvolatile ferroelectric memories, data-storage media, piezoelectric actuators, and electric energy storage capacitors.