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Journal of Nanomaterials
Volume 2015, Article ID 436851, 6 pages
http://dx.doi.org/10.1155/2015/436851
Research Article

MOCVD Growth and Fabrication of High Power MUTC Photodiodes Using InGaAs-InP System

Temasek Laboratories, Nanyang Technological University (TL@NTU), 50 Nanyang Drive, Singapore 637553

Received 13 August 2015; Revised 30 October 2015; Accepted 1 November 2015

Academic Editor: Meiyong Liao

Copyright © 2015 Nandan Singh et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Nandan Singh, Charles Kin Fai Ho, Guo Xin Tina, et al., “MOCVD Growth and Fabrication of High Power MUTC Photodiodes Using InGaAs-InP System,” Journal of Nanomaterials, vol. 2015, Article ID 436851, 6 pages, 2015. https://doi.org/10.1155/2015/436851.