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Journal of Nanomaterials
Volume 2015, Article ID 436851, 6 pages
http://dx.doi.org/10.1155/2015/436851
Research Article

MOCVD Growth and Fabrication of High Power MUTC Photodiodes Using InGaAs-InP System

Temasek Laboratories, Nanyang Technological University (TL@NTU), 50 Nanyang Drive, Singapore 637553

Received 13 August 2015; Revised 30 October 2015; Accepted 1 November 2015

Academic Editor: Meiyong Liao

Copyright © 2015 Nandan Singh et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. N. Li, X. Li, S. Demiguel et al., “High-saturation-current charge-compensated InGaAs-InP uni-traveling-carrier photodiode,” IEEE Photonics Technology Letters, vol. 16, no. 3, pp. 864–866, 2004. View at Publisher · View at Google Scholar · View at Scopus
  2. E. Rouvalis, M. Chtioui, M. Tran et al., “High-speed photodiodes for InP-based photonic integrated circuits,” Optics Express, vol. 20, no. 8, pp. 9172–9177, 2012. View at Publisher · View at Google Scholar · View at Scopus
  3. K. Swaminathan, L.-M. Yang, T. J. Grassman et al., “Metamorphic In020Ga0. 80As p-i-n photodetectors grown on GaAs substrates for near infrared applications,” Optics Express, vol. 19, no. 8, pp. 7280–7288, 2011. View at Publisher · View at Google Scholar · View at Scopus
  4. Z. Li, Y. Fu, M. Piels et al., “High-power high-linearity flip-chip bonded modified uni-traveling carrier photodiode,” Optics Express, vol. 19, no. 26, pp. B385–B390, 2011. View at Publisher · View at Google Scholar · View at Scopus
  5. D. A. Tulchinsky, X. Li, N. Li, S. Demiguel, J. C. Campbell, and K. J. Williams, “High-saturation current wide-bandwidth photodetectors,” IEEE Journal on Selected Topics in Quantum Electronics, vol. 10, no. 4, pp. 702–708, 2004. View at Publisher · View at Google Scholar · View at Scopus
  6. F. J. Effenberger and A. M. Joshi, “Ultrafast, dual-depletion region, InGaAs/InP p-i-n detector,” Journal of Lightwave Technology, vol. 14, no. 8, pp. 1859–1864, 1996. View at Publisher · View at Google Scholar · View at Scopus
  7. K. Kato, S. Hata, K. Kawano, and A. Kozen, “Design of ultrawide-band, high-sensitivity p-i-n photodetectors,” IEICE Transactions on Electronics, vol. E76-C, no. 2, pp. 214–221, 1993. View at Google Scholar · View at Scopus
  8. H. Ito, S. Kodama, Y. Muramoto, T. Furuta, T. Nagatsuma, and T. Ishibashi, “High-speed and high-output InP-InGaAs unitraveling-carrier photodiodes,” IEEE Journal on Selected Topics in Quantum Electronics, vol. 10, no. 4, pp. 709–727, 2004. View at Publisher · View at Google Scholar · View at Scopus
  9. X. Wang, N. Duan, H. Chen, and J. C. Campbell, “InGaAs-InP photodiodes with high responsivity and high saturation power,” IEEE Photonics Technology Letters, vol. 19, no. 16, pp. 1272–1274, 2007. View at Publisher · View at Google Scholar
  10. H.-J. Song and T. Nagatsuma, “Present and future of terahertz communications,” IEEE Transactions on Terahertz Science and Technology, vol. 1, no. 1, pp. 256–263, 2011. View at Publisher · View at Google Scholar · View at Scopus
  11. S. Koenig, D. Lopez-Diaz, J. Antes et al., “Wireless sub-THz communication system with high data rate,” Nature Photonics, vol. 7, no. 12, pp. 977–981, 2013. View at Publisher · View at Google Scholar · View at Scopus
  12. T. Nagatsuma, H. Ito, and T. Ishibashi, “High-power RF photodiodes and their applications,” Laser and Photonics Reviews, vol. 3, no. 1-2, pp. 123–137, 2009. View at Publisher · View at Google Scholar · View at Scopus
  13. A. S. Jordan, A. Robertson, and J. L. Zilko, “Thermodynamic interpretation of quaternary (InGaAsP) layer uniformity grown by low-pressure metalorganic vapor phase epitaxy,” Applied Physics Letters, vol. 62, no. 4, pp. 360–362, 1993. View at Publisher · View at Google Scholar · View at Scopus
  14. D. Keiper, R. Westphalen, and G. Landgren, “Metal organic vapour-phase epitaxy (MOVPE) growth of InP and InGaAs using tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) in N2 ambient,” Journal of Crystal Growth, vol. 204, no. 3, pp. 256–262, 1999. View at Publisher · View at Google Scholar · View at Scopus
  15. D. Keiper and R. Westphalen, “Effect of the carrier gas and the group-V precursor on the DEZn doping efficiency for InP and In0.54Ga0.46As in LP-MOVPE,” Journal of Crystal Growth, vol. 233, no. 1-2, pp. 126–131, 2001. View at Publisher · View at Google Scholar · View at Scopus
  16. M. Horita, M. Suzuki, and Y. Matsushima, “MOVPE growth of in GaAsP using TBA and TBP with extremely low V/Ill ratio,” in Proceedings of the 6th International Conference Metalorganic Vapor Phase Epitaxy, pp. 191–192, June 1992. View at Publisher · View at Google Scholar
  17. P. Enquist, J. A. Hutchby, and T. J. Lyon, “Growth and diffusion of abrupt Zn profiles in gallium arsenide and heterojunction bipolar transistor structures grown by MOVPE,” Journal of Applied Physics, vol. 63, pp. 4485–4493, 1988. View at Google Scholar
  18. Q. Zhou, A. S. Cross, A. Beling, Y. Fu, Z. Lu, and J. C. Campbell, “High-power V-band InGaAs/InP photodiodes,” IEEE Photonics Technology Letters, vol. 25, no. 10, pp. 907–909, 2013. View at Publisher · View at Google Scholar · View at Scopus
  19. A. Kaminski, J. J. Marchand, A. Fave, and A. Laugier, “New method of parameters extraction from dark I-V curve,” in Proceedings of the Conference Record of the 26th IEEE Photovoltaic Specialists Conference, pp. 203–206, Anaheim, Calif, USA, September 1997. View at Publisher · View at Google Scholar
  20. M. Chtioui, A. Enard, D. Carpentier et al., “High-performance uni-traveling-carrier photodiodes with a new collector design,” IEEE Photonics Technology Letters, vol. 20, no. 13, pp. 1163–1165, 2008. View at Publisher · View at Google Scholar · View at Scopus
  21. N. Duan, X. Wang, N. Li, H.-D. Liu, and J. C. Campbell, “Thermal analysis of high-power InGaAs–InP photodiodes,” IEEE Journal of Quantum Electronics, vol. 42, no. 12, pp. 1255–1258, 2006. View at Publisher · View at Google Scholar · View at Scopus
  22. G. A. Davis, R. E. Weiss, R. A. LaRue, K. J. Williams, and R. D. Esman, “A 920-1650-nm high-current photodetector,” IEEE Photonics Technology Letters, vol. 8, no. 10, pp. 1373–1375, 1996. View at Publisher · View at Google Scholar · View at Scopus