Gallium Nitride Electrical Characteristics Extraction and Uniformity Sorting

Table 2

Simulation model parameters.

Symbol	GaN FETs model parameter
	Parameter	E-mode	D-mode
	Transconductance parameter (A/V^2)	24	2.1
VTO	Zero-bias threshold voltage	1 V	−3.9 V
	Fitting parameter to adjust the curvature	0.4	0.6
CGS	External gate to source capacitance (nF)	0.45	0.06
CGD	External gate to drain capacitance
	CGD0 (nF)	0.1	0.02
	(V)	0.66	0.75
		0.39	0.14
CDS	External drain to source capacitance
	CDS0 (nF)	0.89	0.07
	(V)	0.4	0.35
		0.22	0.05
Cstray	Stray capacitance in the circuit (nF)	2	2
	Voltage probe resistance (Ω)	10 M	1 M
	GaN FET turn-off resistance (Ω)	7.647 M	904.8 k