Review Article
A Review on the Synthesis Methods of CdSeS-Based Nanostructures
Table 6
The reaction conditions for CdSeS nanostructures prepared by one-step thermal evaporation.
| CdSeS nanostructures | Evaporation sources | Substrate | Catalyst layer | Protection gas | Temperature (°C) | Time (min) | Refs. |
| CdSeS nanobelts | CdS, CdSe | Silicon slices | Au, ~2 nm | He | 900 | 60 | [8] | CdSeS whiskers | CdS, CdSe | Silicon slices | Au, 10 nm | He | 850 | 120 | [20] | Si-CdSeS core-shell nanowires | CdS, CdSe, silicon wafer | Quartz substrate | Au, 6 nm | Ar | 1080 | 60 | [75] | CdSeS nanobelts | CdS, CdSe | Si substrate | Au | He | 900 | No data | [50] | CdSeS nanosheets | CdS, CdSe | Si substrate | Au, 5–10 nm | N2 + 10% H2 | 850–900 | 60 | [69] | CdSeS nanowires | CdS, CdSe | Si wafers | Au, 2 nm | N2 |
() 830 () 800 | () 40 () 60 | [101] | CdSeS nanobelts | CdS, CdSe | Sapphire wafer | Au, ~1 nm | He | 850 | 30 | [13] | CdSeS nanowire arrays | CdS, CdSe | Mica substrate | Poly-l-lysine, 5 nm | Ar + 5% H2 | 750 | 30 | [102] | CdSeS nanobelts | CdS, CdSe | C-plane sapphire | Au | He | 850 | 30 | [103] | CdSeS nanowires | CdS, CdSe | Silicon wafer | Au, 30 nm | He | 900 | 60 | [44] |
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