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Journal of Nanomaterials
Volume 2015, Article ID 537696, 6 pages
Research Article

Investigation of In Situ Boron-Doping in SiGe Source/Drain Layer Growth for PMOS Devices

1State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
2Shanghai IC R&D Center Co. Ltd., Shanghai 201210, China

Received 9 September 2015; Accepted 15 October 2015

Academic Editor: You Yin

Copyright © 2015 Min Zhong et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Embedded SiGe (eSiGe) source/drain (S/D) was studied to enhance PMOS performance. Detailed investigations concerning the effect of GeH4 and B2H6 gas flow rate on the resultant Boron-doping of the SiGe layer (on a 40 nm patterned wafer) were carried out. Various SiGeB epitaxial growth experiments were realized under systematically varying experimental conditions. Key structural and chemical characteristics of the SiGeB layers were investigated using Secondary Ion Mass Spectroscopy (SIMS), nanobeam diffraction mode (NBD), and Transmission Electron Microscopy (TEM) itself. Furthermore, performances of 40 nm PMOS transistors are also measured by the Parametric Test Systems for the semiconductor industry. The results indicate that the ratio between GeH4 and B2H6 gas flow rates influences not only the Ge and Boron content of the SiGeB layer, but also the PMOS channel strain and the morphology of the eSiGe S/D regions which directly affect PMOS performance. In addition, the mechanism of Boron-doping during SiGe layer growth on the pattern wafer is briefly discussed. The results and discussion presented within this paper are expected to contribute to the optimization of eSiGe stressor, aimed for advanced CMOS devices.