Table of Contents Author Guidelines Submit a Manuscript
Journal of Nanomaterials
Volume 2015, Article ID 537696, 6 pages
http://dx.doi.org/10.1155/2015/537696
Research Article

Investigation of In Situ Boron-Doping in SiGe Source/Drain Layer Growth for PMOS Devices

1State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
2Shanghai IC R&D Center Co. Ltd., Shanghai 201210, China

Received 9 September 2015; Accepted 15 October 2015

Academic Editor: You Yin

Copyright © 2015 Min Zhong et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. T. Ghani, M. Armstrong, C. Auth et al., “A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors,” in Proceedings of the IEEE International Electron Devices Meeting, pp. 11.6.1–11.6.3, Washington, DC, USA, December 2003. View at Scopus
  2. M. Kolahdouz, P. T. Z. Adibi, A. A. Farniya et al., “Selective growth of B- and C-doped SiGe layers in unprocessed and recessed Si openings for p-type metal-oxide-semiconductor field-effect transistors application,” Journal of the Electrochemical Society, vol. 157, no. 6, pp. H633–H637, 2010. View at Publisher · View at Google Scholar · View at Scopus
  3. J.-P. Han, H. Utomo, L. W. Teo et al., “Novel enhanced stressor with graded embedded SiGe source/drain for high performance CMOS devices,” in Proceedings of the International Electron Devices Meeting (IEDM '06), pp. 1–4, IEEE, San Francisco, Calif, USA, December 2006. View at Publisher · View at Google Scholar · View at Scopus
  4. A. V.-Y. Thean, D. Zhang, V. Vartanian et al., “Strain-enhanced CMOS through novel process-substrate stress hybridization of super-critically thick strained silicon directly on insulator (SC-SSOI),” in Proceedings of the Symposium on VLSI Technology. Digest of Technical Papers, pp. 101–103, IEEE, Honolulu, Hawaii, USA, June 2006. View at Publisher · View at Google Scholar
  5. D. Lee, M. Sakuraba, T. Matsuura, J. Murota, and T. Tsuchiya, “SiGe-channel 0.1 μm pMOSFETs with super self-aligned ultra-shallow junction formed by selective in-situ B-doped SiGe CVD,” in Proceedings of the 60th Digest Device Research Conference (DRC '02), pp. 83–84, IEEE, Santa Barbara, Calif, USA, June 2002. View at Publisher · View at Google Scholar
  6. N. Yasutake, A. Azuma, T. Ishida et al., “A high performance pMOSFET with two-step recessed SiGe-S/D structure for 32 nm node and beyond,” Solid-State Electronics, vol. 51, no. 11-12, pp. 1437–1443, 2007. View at Publisher · View at Google Scholar · View at Scopus
  7. S. N. R. Kazmi, A. Y. Kovalgin, A. A. I. Aarnink, C. Salm, and J. Schmitz, “Low-stress highly-conductive in-situ boron doped Ge0.7Si0.3 films by LPCVD,” ECS Journal of Solid State Science and Technology, vol. 1, no. 5, pp. P222–P226, 2012. View at Publisher · View at Google Scholar · View at Scopus
  8. Z. Zhu, Z. Cong, and R. Balasubramanian, “Selective epitaxial growth of heavily boron-doped silicon with uniform doping depth profile,” ECS Transactions, vol. 50, pp. 999–1006, 2013. View at Google Scholar
  9. C. I. Liao, C. Y. Chen, S. Yu et al., “High quality SiGe:B of high Ge layer for 14nm and beyond FINFET processes,” ECS Transactions, vol. 58, no. 7, pp. 159–162, 2013. View at Publisher · View at Google Scholar
  10. N. Tamura, Y. Shimamune, and H. Maekawa, “Embedded silicon germanium (eSiGe) technologies for 45 nm nodes and beyond,” in Proceedings of the International 8th Workshop on Junction Technology (IWJT '08), pp. 73–77, Shanghai, China, May 2008. View at Publisher · View at Google Scholar · View at Scopus
  11. X. J. Ning, D. Gao, P. Bonfanti et al., “Selective epitaxial growth of SiGe for strained Si transistors,” Materials Science and Engineering B: Solid-State Materials for Advanced Technology, vol. 134, no. 2-3, pp. 165–171, 2006. View at Publisher · View at Google Scholar · View at Scopus
  12. L. Jin, H. Tu, Y. He, Y. He, and J. Wu, “A comprehensive study of SiGe source/Drain local stress by nano beam diffraction,” ECS Transactions, vol. 52, pp. 33–37, 2013. View at Google Scholar
  13. J. Li, A. Lamberti, A. Domenicucci et al., “Channel strain characterization in embedded SiGe by nano-beam diffraction,” ECS Transactions, vol. 16, no. 10, pp. 545–549, 2008. View at Publisher · View at Google Scholar
  14. T.-H. Yang, G. Luo, E. Y. Chang, T.-Y. Yang, H.-C. Tseng, and C.-Y. Chang, “Study of nickel silicide contact on Si/Si1-xGex,” IEEE Electron Device Letters, vol. 24, no. 9, pp. 544–546, 2003. View at Publisher · View at Google Scholar · View at Scopus