Research Article
Investigation of In Situ Boron-Doping in SiGe Source/Drain Layer Growth for PMOS Devices
Table 1
Key characteristics of the fabricated Boron-doped SiGe bulk samples.
| | Sample number | #1 | #2 | #3 | #4 | #5 |
| GeH4 flow rate (sccm) | 520 | 400 | 360 | 400 | 400 | B2H6 flow rate (sccm) | 60 | 60 | 60 | 70 | 40 | GeH4/B2H6 flow rate ratio () | 8.67 | 6.67 | 6.00 | 5.71 | 10.00 | Channel strain 〈2, −2, 0〉 | −0.88% | −1.42% | −0.80% | −0.60% | −1.50% | SiGe bulk Dep rate (nm/min) | 20.6 | 13.2 | 8.04 | 17.9 | 7.9 | Ge content in bulk | 35% | 33% | 29% | 29% | 35% | Boron content in bulk (cm−3) | | | | | |
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