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Journal of Nanomaterials
Volume 2015, Article ID 538954, 15 pages
http://dx.doi.org/10.1155/2015/538954
Review Article

Metal-Insulator Phase Transition in Quasi-One-Dimensional VO2 Structures

1Jeonju Center, Korea Basic Science Institute, Jeonju, Jeollabuk-do 561-180, Republic of Korea
2Department of Engineering Science, University of Oxford, Oxford OX1 3PJ, UK

Received 15 January 2015; Accepted 16 March 2015

Academic Editor: Chetna Dhand

Copyright © 2015 Woong-Ki Hong et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

The metal-insulator transition (MIT) in strongly correlated oxides has attracted considerable attention from both theoretical and experimental researchers. Among the strongly correlated oxides, vanadium dioxide (VO2) has been extensively studied in the last decade because of a sharp, reversible change in its optical, electrical, and magnetic properties at approximately 341 K, which would be possible and promising to develop functional devices with advanced technology by utilizing MITs. However, taking the step towards successful commercialization requires the comprehensive understanding of MIT mechanisms, enabling us to manipulate the nature of transitions. In this regard, recently, quasi-one-dimensional (quasi-1D) VO2 structures have been intensively investigated due to their attractive geometry and unique physical properties to observe new aspects of transitions compared with their bulk counterparts. Thus, in this review, we will address recent research progress in the development of various approaches for the modification of MITs in quasi-1D VO2 structures. Furthermore, we will review recent studies on realizing novel functional devices based on quasi-1D VO2 structures for a wide range of applications, such as a gas sensor, a flexible strain sensor, an electrical switch, a thermal memory, and a nonvolatile electrical memory with multiple resistance.