Density Functional Theory Study on Defect Feature of As_GaGa_As in Gallium Arsenide

Figure 4

The band structure and the total DOS of GaAs with internal double antisite defects. (a) The distance is 5.653 Å between the deep defects and the upper boundary. (b) The distance is 2.827 Å between the shallow defects and the upper boundary.

(a)

(b)