Controlled Pore Formation on Mesoporous Single Crystalline Silicon Nanowires: Threshold and Mechanisms

Figure 2

Length of the silicon nanowires as a function of the etching time for different concentrations of the oxidizing agent H₂O₂. (a) Undoped silicon (100), specific resistivity ρ > 1000 Ωcm. (b) Medium boron-doped silicon (100) (ρ = 14–23 Ωcm), p-type.

(a)

(b)