Research Article
Controlled Pore Formation on Mesoporous Single Crystalline Silicon Nanowires: Threshold and Mechanisms
Table 1
Gas adsorption data for nanowire ensembles prepared from highly boron-doped silicon ( < 0.01 Ωcm). For comparison undoped nanowire ensemble ( > 1000 Ωcm, (H2O2) = 0.5 M, etching time = 185 min, wire length = 111.1 µm) reveals a MBET surface area of 0.113 m2. Nanowire ensemble of medium boron-doped silicon ( = 14–23 Ωcm, (H2O2) = 0.4 M, etching time = 199 min, wire length = 101.6 µm) reveals a MBET surface area of 0.212 m2.
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