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Journal of Nanomaterials
Volume 2015 (2015), Article ID 673135, 6 pages
Research Article

Effect of CdS/Mg-Doped CdSe Cosensitized Photoanode on Quantum Dot Solar Cells

Research Center for Sensor Technology, Beijing Key Laboratory for Sensor, Ministry of Education Key Laboratory for Modern Measurement and Control Technology, School of Applied Sciences, and School of Information & Communication Engineering, Beijing Information Science and Technology University, Jianxiangqiao Campus, Beijing 100101, China

Received 31 May 2014; Accepted 13 August 2014

Academic Editor: Yongfeng Li

Copyright © 2015 Yingxiang Guan et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Quantum dots have emerged as a material platform for low-cost high-performance sensitized solar cells. And doping is an effective method to improve the performance of quantum dot sensitized solar cells (QDSSCs). Since Kwak et al. from South Korea proved the incorporation of Mg in the CdSe quantum dots (QDs) in 2007, the Mg-doped CdSe QDs have been thoroughly studied. Here we report a new attempt on CdS/Mg-doped CdSe quantum dot cosensitized solar cells (QDCSSC). We analyzed the performance of CdS/Mg-doped CdSe quantum dot cosensitized solar cells via discussing the different doping concentration of Mg and the different SILAR cycles of CdS. And we studied the mechanism of CdS/Mg-doped CdSe QDs in detail for the reason why the energy conversion efficiency had been promoted. It is a significant instruction on the development of Mg-doped CdSe quantum dot sensitized solar cells (QDSSCs).