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Journal of Nanomaterials
Volume 2015 (2015), Article ID 678929, 8 pages
Research Article

Effects of Preparation Conditions on the CuInS2 Films Prepared by One-Step Electrodeposition Method

1Key Laboratory for Advanced Technology in Environmental Protection of Jiangsu, Yancheng Institute of Technology, Jiangsu 224051, China
2Beijing Water Science Technology Institute, Beijing 100044, China
3Department of Chemical Engineering, Hanyang University, 55 Hanyangdaehak-ro, Sangnok-gu, Ansan, Gyeonggi-do 426-791, Republic of Korea

Received 17 April 2015; Revised 23 August 2015; Accepted 24 August 2015

Academic Editor: Meiyong Liao

Copyright © 2015 Rongfeng Guan et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


CuInS2 thin films were prepared onto indium tin oxide (ITO) substrates by sulfurization of electrodeposited CuxInySz precursor films under S atmosphere. The influences of deposition potential, Cu2+/In3+ ratio, sulfurization temperature, and sulfur content on the CuInS2 thin films were investigated. Phases and structures were characterized by powder X-ray diffraction and Raman spectroscopy; surface morphology was characterized by Scanning Electron Microscopy; optical and electrical properties were characterized by UV-Vis absorption and Mott-Schottky curves, respectively. As a result, the optimal well-crystallized CuInS2 films preparation parameters were determined to be deposition potential of −0.8 V, Cu2+/In3+ ratio of 1.4, sulfur content of 1 g, and the sulfurization temperature of 550°C for 1 h; CuInS2 thin films prepared by one-step electrodeposition present the p-type semiconductor, with thickness about 4-5 μm and their optical band gaps in the range of 1.53~1.55 eV.