Ge Nanoislands Grown by Radio Frequency Magnetron Sputtering: Comprehensive Investigation of Surface Morphology and Optical Properties

Figure 21

Schematic band structure of Ge dot/SiO₂ or defects. Confined state energy level in the Ge QDs is indicated by dotted lines. The energy values of 1.17 eV and 0.66 eV correspond to the band gap of bulk Si and Ge, respectively.