Ge Nanoislands Grown by Radio Frequency Magnetron Sputtering: Comprehensive Investigation of Surface Morphology and Optical Properties

Figure 22

Raw data of Raman spectra for preannealed (H) and annealed at 650°C (H₆₅₀) samples. Inset: the frequency positions of the Ge-Ge optical phonons which are shifted slightly towards higher frequencies with respect to their bulk value (left). The Ge-Ge optical phonon for preannealed sample fitted with theory models (right).