Research Article
Ge Nanoislands Grown by Radio Frequency Magnetron Sputtering: Comprehensive Investigation of Surface Morphology and Optical Properties
Figure 9
Schematic representation of the island transition mechanism. Si substrate diffuses into the perimeter of pyramidal Ge dots and forming a Si-Ge composition. It causes misfit reduction and nonuniformity of strain across the dots leading to formation of domes at 650°C.