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Journal of Nanomaterials
Volume 2015 (2015), Article ID 681242, 20 pages
http://dx.doi.org/10.1155/2015/681242
Research Article

Ge Nanoislands Grown by Radio Frequency Magnetron Sputtering: Comprehensive Investigation of Surface Morphology and Optical Properties

1Ibn Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, 81310 Skudai, Johor, Malaysia
2Faculty of Science Technology and Human Development, Universiti Tun Hussein Onn Malaysia, 86400 Parit Raja, Johor, Malaysia
3Advanced Optical Material Research Group, Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, 81310 Skudai, Johor, Malaysia

Received 29 October 2014; Accepted 4 January 2015

Academic Editor: Mingliang Ren

Copyright © 2015 Alireza Samavati et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. H. Presting, H. Kibbel, M. Jaros et al., “Ultrathin SimGen strained layer superlattices—a step towards Si optoelectronics,” Semiconductor Science and Technology, vol. 7, no. 9, pp. 1127–1148, 1992. View at Publisher · View at Google Scholar · View at Scopus
  2. D. J. Paul, “Si/SiGe heterostructures: from material and physics to devices and circuits,” Semiconductor Science and Technology, vol. 19, no. 10, pp. R75–R108, 2004. View at Publisher · View at Google Scholar
  3. S. V. Kondratenko, O. V. Vakulenko, Y. N. Kozyrev et al., “Photovoltaic properties and photoconductivity in multilayer Ge/Si heterostructures with Ge nanoislands,” Journal of Materials Science, vol. 46, no. 17, pp. 5737–5742, 2011. View at Publisher · View at Google Scholar · View at Scopus
  4. D. C. Paine, C. Caragianis, T. Y. Kim, Y. Shigesato, and T. Ishahara, “Visible photoluminescence from nanocrystalline Ge formed by H2 reduction of Si0.6Ge0.4O2,” Applied Physics Letters, vol. 62, no. 22, pp. 2842–2844, 1993. View at Publisher · View at Google Scholar · View at Scopus
  5. A. K. Das, S. K. Ghose, B. N. Dev, G. Kuri, and T. R. Yang, “Spontaneous nanostructural island formation and layer-to-island mass transport in Ge layers on Si(111) surfaces,” Applied Surface Science, vol. 165, no. 4, pp. 260–270, 2000. View at Publisher · View at Google Scholar · View at Scopus
  6. S. Huang, Z. Xia, H. Xiao, J. Zheng, Y. Xie, and G. Xie, “Structure and property of Ge/Si nanomultilayers prepared by magnetron sputtering,” Surface and Coatings Technology, vol. 204, no. 5, pp. 558–562, 2009. View at Publisher · View at Google Scholar · View at Scopus
  7. A. R. Samavati, Z. Othaman, S. Dabagh, and S. K. Ghoshal, “Impact of annealing on surface morphology and photoluminescence of self-assembled Ge and Si quantum dots,” Journal of Nanoscience and Nanotechnology, vol. 14, no. 7, pp. 5266–5271, 2014. View at Publisher · View at Google Scholar
  8. G. Costantini, A. Rastelli, C. Manzano et al., “Pyramids and domes in the InAs/GaAs(0 0 1) and Ge/Si(0 0 1) systems,” Journal of Crystal Growth, vol. 278, no. 1–4, pp. 38–45, 2005. View at Publisher · View at Google Scholar · View at Scopus
  9. A. Samavati, Z. Othaman, S. K. Ghoshal, S. S. Lapari, and N. Pourmand, “Photoluminescence from Ge/Si(100) nanoislands,” Nanoscience and Nanotechnology Letters, vol. 6, no. 2, pp. 106–110, 2014. View at Publisher · View at Google Scholar · View at Scopus
  10. K. Das, M. L. N. Goswami, A. Dhar, B. K. Mathur, and S. K. Ray, “Growth of Ge islands and nanocrystals using RF magnetron sputtering and their characterization,” Nanotechnology, vol. 18, no. 17, Article ID 175301, 2007. View at Publisher · View at Google Scholar · View at Scopus
  11. A. A. Shklyaev, M. Shibata, and M. Ichikawa, “High-density ultrasmall epitaxial Ge islands on Si(111) surfaces with a SiO2 coverage,” Physical Review B—Condensed Matter and Materials Physics, vol. 62, no. 3, pp. 1540–1543, 2000. View at Publisher · View at Google Scholar · View at Scopus
  12. A. F. Khan, M. Mehmood, A. M. Rana, and T. Muhammad, “Effect of annealing on structural, optical and electrical properties of nanostructured Ge thin films,” Applied Surface Science, vol. 256, no. 7, pp. 2031–2037, 2010. View at Publisher · View at Google Scholar · View at Scopus
  13. F. M. Ross, R. M. Tromp, and M. C. Reuter, “Transition states between pyramids and domes during Ge/Si island growth,” Science, vol. 286, no. 5446, pp. 1931–1934, 1999. View at Publisher · View at Google Scholar · View at Scopus
  14. F. Montalenti, P. Raiteri, D. B. Migas et al., “Atomic-scale pathway of the pyramid-to-dome transition during Ge growth on Si(001),” Physical Review Letters, vol. 93, no. 21, Article ID 216102, 2004. View at Google Scholar · View at Scopus
  15. F. M. Ross, J. Tersoff, and R. M. Tromp, “Coarsening of self-assembled Ge quantum dots on Si(001),” Physical Review Letters, vol. 80, no. 5, pp. 984–987, 1998. View at Publisher · View at Google Scholar · View at Scopus
  16. V. Sorianello, L. Colace, N. Armani et al., “Low-temperature germanium thin films on silicon,” Optical Materials Express, vol. 1, no. 5, pp. 856–865, 2011. View at Publisher · View at Google Scholar · View at Scopus
  17. E. D. van Hattum, A. Palmero, W. M. Arnoldbik, H. Rudolph, and F. H. P. M. Habraken, “On the ion and neutral atom bombardment of the growth surface in magnetron plasma sputter deposition,” Applied Physics Letters, vol. 91, no. 17, Article ID 171501, 2007. View at Publisher · View at Google Scholar · View at Scopus
  18. A. Palmero, H. Rudolph, and F. H. P. M. Habraken, “One-dimensional analysis of the rate of plasma-assisted sputter deposition,” Journal of Applied Physics, vol. 101, no. 8, Article ID 083307, 2007. View at Publisher · View at Google Scholar
  19. B. D. Cullity and R. S. Stuart, Elements of X-Ray Diffraction, vol. 3, Prentice Hall, Upper Saddle River, NJ, USA, 2001.
  20. J.-M. Baribeau, R. Pascual, and S. Saimoto, “Interdiffusion and strain relaxation in (SimGen) p superlattices,” Applied Physics Letters, vol. 57, no. 15, pp. 1502–1504, 1990. View at Publisher · View at Google Scholar · View at Scopus
  21. S. M. Prokes, O. J. Glembocki, and D. J. Godbey, “Stress and its effect on the interdiffusion in Si1-xGex/Si superlattices,” Applied Physics Letters, vol. 60, no. 9, pp. 1087–1089, 1992. View at Publisher · View at Google Scholar · View at Scopus
  22. Y. Chen and J. Washburn, “Structural transition in large-lattice-mismatch heteroepitaxy,” Physical Review Letters, vol. 77, no. 19, pp. 4046–4049, 1996. View at Publisher · View at Google Scholar
  23. D. E. Jesson, G. Chen, K. M. Chen, and S. J. Pennycook, “Self-limiting growth of strained faceted islands,” Physical Review Letters, vol. 80, no. 23, pp. 5156–5159, 1998. View at Publisher · View at Google Scholar · View at Scopus
  24. I. Daruka and A.-L. Barabási, “Dislocation-free island formation in heteroepitaxial growth: a study at equilibrium,” Physical Review Letters, vol. 79, no. 19, pp. 3708–3711, 1997. View at Publisher · View at Google Scholar
  25. T. I. Kamins, G. Medeiros-Ribeiro, D. A. A. Olhberg, and R. S. J. Williams, “Evolution of Ge islands on Si(001) during annealing,” Journal of Applied Physics, vol. 85, no. 2, article 1159, 1999. View at Publisher · View at Google Scholar
  26. J. A. Floro, M. B. Sinclair, E. Chason et al., “Novel SiGe island coarsening kinetics: ostwald ripening and elastic interactions,” Physical Review Letters, vol. 84, no. 4, article 701, 2000. View at Publisher · View at Google Scholar · View at Scopus
  27. I. Goldfarb, P. T. Hayden, J. H. G. Owen, and G. A. D. Briggs, “Competing growth mechanisms of Ge/Si(001) coherent clusters,” Physical Review B—Condensed Matter and Materials Physics, vol. 56, no. 16, pp. 10459–10468, 1997. View at Publisher · View at Google Scholar · View at Scopus
  28. R. K. Singha, S. Das, S. Majumdar, K. Das, A. Dhar, and S. K. Ray, “Evolution of strain and composition of Ge islands on Si (001) grown by molecular beam epitaxy during postgrowth annealing,” Journal of Applied Physics, vol. 103, no. 11, Article ID 114301, 2008. View at Publisher · View at Google Scholar · View at Scopus
  29. S. Hullavarad, N. Hullavarad, B. Claflin, and D. Look, “Persistent photoconductivity studies in nanostructured ZnO UV sensors,” Nanoscale Research Letters, vol. 4, no. 12, pp. 1421–1427, 2009. View at Publisher · View at Google Scholar · View at Scopus
  30. T. Takagahara and K. Takeda, “Theory of the quantum confinement effect on excitons in quantum dots of indirect-gap materials,” Physical Review B, vol. 46, no. 23, pp. 15578–15581, 1992. View at Publisher · View at Google Scholar
  31. M. W. Dashiell, U. Denker, C. Müller et al., “Photoluminescence of ultrasmall Ge quantum dots grown by molecular-beam epitaxy at low temperatures,” Applied Physics Letters, vol. 80, no. 7, pp. 1279–1281, 2002. View at Publisher · View at Google Scholar · View at Scopus
  32. L. Spanhel and M. A. Anderson, “Semiconductor clusters in the sol-gel process: quantized aggregation, gelation, and crystal growth in concentrated ZnO colloids,” Journal of the American Chemical Society, vol. 113, no. 8, pp. 2826–2833, 1991. View at Publisher · View at Google Scholar · View at Scopus
  33. Z. Yang, Y. Shi, J. Liu et al., “Optical properties of Ge/Si quantum dot superlattices,” Materials Letters, vol. 58, no. 29, pp. 3765–3768, 2004. View at Publisher · View at Google Scholar · View at Scopus
  34. L. P. Ginzburg, A. A. Gordeev, A. P. Gorchakov, and A. P. Jilinsky, “Some features of the blue luminescence in v-Si(1−x)Ge(x)O2,” Journal of Non-Crystalline Solids, vol. 183, no. 3, pp. 234–242, 1995. View at Publisher · View at Google Scholar · View at Scopus
  35. M. Gallagher and U. Osterberg, “Spectroscopy of defects in germanium-doped silica glass,” Journal of Applied Physics, vol. 74, no. 4, pp. 2771–2778, 1993. View at Publisher · View at Google Scholar · View at Scopus
  36. M. L. Cohen and J. R. Chelikowsky, Electronic Structure and Optical Properties of Semiconductors, Springer Series Solid-State Science, Springer, Berlin, Germany, 2nd edition, 1989.
  37. K. S. Min, K. V. Shcheglov, C. M. Yang, H. A. Atwater, M. L. Brongersma, and A. Polman, “The role of quantum-confined excitons vs defects in the visible luminescence of SiO2 films containing Ge nanocrystals,” Applied Physics Letters, vol. 68, no. 18, pp. 2511–2513, 1996. View at Publisher · View at Google Scholar · View at Scopus
  38. S. Takeoka, M. Fujii, S. Hayashi, and K. Yamamoto, “Size-dependent near-infrared photoluminescence from Ge nanocrystals embedded in SiO2 matrices,” Physical Review B—Condensed Matter and Materials Physics, vol. 58, no. 12, article 7921, 1998. View at Publisher · View at Google Scholar · View at Scopus
  39. G. Kartopu, V. A. Karavanskii, U. Serincan et al., “Can chemically etched germanium or germanium nanocrystals emit visible photoluminescence?” Physica Status Solidi A, vol. 202, no. 8, pp. 1472–1476, 2005. View at Publisher · View at Google Scholar · View at Scopus
  40. Z. H. Huang, S. D. Liang, C. Y. Chen, D. L. Lin, and J. Phys, “Polaronic effects on donor states in III-V and II-VI quantum wells under electric fields,” Journal of Physics: Condensed Matter, vol. 10, no. 9, p. 1985, 1998. View at Publisher · View at Google Scholar
  41. J. L. Liu, G. Jin, Y. S. Tang, Y. H. Luo, K. L. Wang, and D. P. Yu, “Optical and acoustic phonon modes in self-organized Ge quantum dot superlattices,” Applied Physics Letters, vol. 76, no. 5, pp. 586–588, 2000. View at Publisher · View at Google Scholar
  42. S. H. Kwok, P. Y. Yu, C. H. Tung et al., “Confinement and electron-phonon interactions of the E1 exciton in self-organized Ge quantum dots,” Physical Review B—Condensed Matter and Materials Physics, vol. 59, no. 7, pp. 4980–4984, 1999. View at Publisher · View at Google Scholar · View at Scopus
  43. P. M. Fauchett and I. H. Campbell, “Raman spectroscopy of low-dimensional semiconductors,” Critical Reviews in Solid State and Materials Sciences, vol. 14, supplement 1, pp. S79–S101, 1988. View at Google Scholar
  44. C. E. Bottani, C. Mantini, P. Milani et al., “Raman, optical-absorption, and transmission electron microscopy study of size effects in germanium quantum dots,” Applied Physics Letters, vol. 69, no. 16, pp. 2409–2411, 1996. View at Publisher · View at Google Scholar · View at Scopus
  45. M. Fujii, S. Hayashi, and K. Yamamoto, “Growth of Ge microcrystals in SiO2 thin film matrices: a Raman and electron microscopic study,” Japanese Journal of Applied Physics, vol. 30, no. 4, part 1, pp. 687–694, 1991. View at Publisher · View at Google Scholar
  46. W. K. Choi, V. Ng, S. P. Ng, H. H. Thio, Z. X. Shen, and W. S. Li, “Raman characterization of germanium nanocrystals in amorphous silicon oxide films synthesized by rapid thermal annealing,” Journal of Applied Physics, vol. 86, no. 3, pp. 1398–1403, 1999. View at Publisher · View at Google Scholar · View at Scopus
  47. A. R. Samavati, S. K. Ghoshal, and Z. Othaman, “Growth of Ge/Si(100) nanostructures by radio-frequency magnetron sputtering: the role of annealing temperature,” Chinese Physics Letters, vol. 29, Article ID 048101, 2012. View at Publisher · View at Google Scholar
  48. Y. X. Jie, A. T. S. Wee, C. H. A. Huan, W. X. Sun, Z. X. Shen, and S. J. Chua, “Raman and photoluminescence properties of Ge nanocrystals in silicon oxide matrix,” Materials Science and Engineering B, vol. 107, no. 1, pp. 8–13, 2004. View at Publisher · View at Google Scholar · View at Scopus
  49. M. Zacharias and P. M. Fauchet, “Blue luminescence in films containing Ge and GeO2 nanocrystals: the role of defects,” Applied Physics Letters, vol. 71, no. 3, pp. 380–382, 1997. View at Publisher · View at Google Scholar