Research Article
Ge Nanoislands Grown by Radio Frequency Magnetron Sputtering: Comprehensive Investigation of Surface Morphology and Optical Properties
Table 1
Process conditions for depositing Ge nanoislands.
| | Sample name | Growth parameters | Substrate temperature
(°C) | Deposition time
(sec) | Ar flow rate
(sccm) | rF power
(W) | Working
pressure
(torr) | Annealing temperature
(°C) | Annealing time
(sec) |
| | SR.T | R.T | 300 | 10 | 100 | 2 × 10−3 | — | — | | S200 | 200 | 300 | 10 | 100 | 2.5 × 10−3 | — | — | | S300 | 300 | 300 | 10 | 100 | 2 × 10−3 | — | — | | S400 | 400 | 300 | 10 | 100 | 3 × 10−3 | — | — | | D300 | 400 | 300 | 10 | 100 | 3 × 10−3 | — | — | | D420 | 400 | 420 | 10 | 100 | 6.5 × 10−3 | — | — | | D540 | 400 | 540 | 10 | 100 | 5.5 × 10−3 | — | — | | D660 | 400 | 660 | 10 | 100 | 6 × 10−3 | — | — | | F5 | 400 | 300 | 5 | 100 | 2.5 × 10−3 | — | — | | F10 | 400 | 300 | 10 | 100 | 3 × 10−3 | — | — | | F12.5 | 400 | 300 | 12.5 | 100 | 5 × 10−3 | — | — | | R50 | 400 | 300 | 10 | 50 | 3 × 10−3 | — | — | | R150 | 400 | 300 | 10 | 150 | 3.5 × 10−3 | — | — | | R250 | 400 | 300 | 10 | 250 | 3 × 10−3 | — | — | | H | 400 | 300 | 10 | 100 | 3 × 10−3 | — | | | H300 | 400 | 300 | 10 | 100 | 3.5 × 10−3 | 300 | 120 | | H450 | 400 | 300 | 10 | 100 | 4 × 10−3 | 450 | 120 | | H650 | 400 | 300 | 10 | 100 | 5.5 × 10−3 | 650 | 120 | | A | 400 | 300 | 10 | 100 | 3 × 10−3 | — | — | | A30 | 400 | 300 | 10 | 100 | 3.5 × 10−3 | 650 | 30 | | A90 | 400 | 300 | 10 | 100 | 5 × 10−3 | 650 | 90 | | A120 | 400 | 300 | 10 | 100 | 4.5 × 10−3 | 650 | 120 |
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