Enhancement of Two-Dimensional Electron-Gas Properties by Zn Polar ZnMgO/MgO/ZnO Structure Grown by Radical-Source Laser Molecular Beam Epitaxy

<div>The evolution of RHEED pattern during growth of the MgO layer. The direction of MgO is &lt;11–20&gt;. (a) The thickness of the MgO buffer layer is 0.5 nm; (b) thickness of MgO = 1 nm; and (c) thickness of MgO = 1.5 nm.</div>

Journal of Nanomaterials

fig2

Figure 2

Figure 2: Enhancement of Two-Dimensional Electron-Gas Properties by Zn Polar ZnMgO/MgO/ZnO Structure Grown by Radical-Source Laser Molecular Beam Epitaxy 

Figure 2 | Enhancement of Two-Dimensional Electron-Gas Properties by Zn Polar ZnMgO/MgO/ZnO Structure Grown by Radical-Source Laser Molecular Beam Epitaxy 