Transition Metal Ion Implantation into Diamond-Like Carbon Coatings: Development of a Base Material for Gas Sensing Applications

Table 1

Ion implantation parameters and theoretical calculations by SRIM and T-DYN [13, 14].

Dopant	Ar	Cu	Ag
Fluence (at. cm^−2)	2.24 × 10^16	1.92 × 10^16	1.24 × 10^16
Peak concentration of dopant using Gaussian approximation model (at.%)	10.0	10.0	10.0
Depth range of 30 keV ions according to SRIM (nm)	31.5	26.6	21.7
Longitudinal straggling according to SRIM (nm)	8.5	6.9	4.1
Peak concentration calculated by T-DYN (at.%)	Ar = 6.6%	Cu = 7.8%	Ag = 8.3%
	C = 70.4%	C = 72.5%	C = 75.6%
	H = 23%	H = 19.8%	H = 16.2%
Depth range according to T-DYN (nm)	33	28	26
HWHM according to T-DYN (nm)	14	9	6
Sputtering yield	0.77	1.11	1.43