Journal of Nanomaterials / 2015 / Article / Tab 2

Research Article

Design and Performance Analysis of 1-Bit FinFET Full Adder Cells for Subthreshold Region at 16 nm Process Technology

Table 2

Optimized parameters for PMOS and NMOS transistors (MOSFET).

TransistorWidth (nm)Length (nm)

PMOS16.0016.00
NMOS32.0016.00

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