Journal of Nanomaterials / 2015 / Article / Tab 3

Research Article

Design and Performance Analysis of 1-Bit FinFET Full Adder Cells for Subthreshold Region at 16 nm Process Technology

Table 3

The values of parameters for n-type and p-type FinFET transistors.

Types of FinFETn-typep-type

Number of fins, NFIN11
Gate length, (nm)16.0016.00
Height of fin, HFIN (nm)10.0017.00
Thickness of fin, TFIN (nm)10.0017.00

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