Design and Performance Analysis of 1-Bit FinFET Full Adder Cells for Subthreshold Region at 16 nm Process Technology

Table 3

The values of parameters for n-type and p-type FinFET transistors.

Types of FinFET	n-type	p-type
Number of fins, NFIN	1	1
Gate length, (nm)	16.00	16.00
Height of fin, HFIN (nm)	10.00	17.00
Thickness of fin, TFIN (nm)	10.00	17.00